Wafer Stealth Dicing

In the production of (micro)chips, it is necessary to separate the individual dies from the wafer. Stealth laser dicing involves creating a modified layer within the wafer by focusing a laser below the surface, then using a tape expander to separate the chips. Typical challenges faced are contamination risks to the wafer, accurately positioning the modified layer onto both XY axes to enable the narrowest possible streets, and maintaining the focus within the wafer and track wafer distortions. At the same time, the highest possible scanning speed is necessary to ensure high throughput. As requirements continue to increase, stealth laser dicing is becoming the first choice for high-volume, MEMS dicing, or smaller and more complex dies. PI responds to the demands of laser-dicing processes with motion systems offering both high accuracy and a high level of straightness at high velocities.